Graphene™ films are grown directly on a Ni/SiO2/Si deposited on an oxidized silicon wafer usinga CVD process.

Specifications:    Research Grade , about 90 % useful  area

• Wafer Size: 100 mm  diameter
• Growth Method:Chemical Vapor Deposition (CVD) Technique 
•  Film thickness:   1-10 monolayer  thick
  • Graphene film is multilayer with thickness varying in the range 1-10 layers;
  • Graphene layers are aligned relative to each (graphite-like A-B stacking ) other as indicated by the Raman spectrum
  • The graphene is grown on Ni film by CVD process.
  • Nickel film is deposited on the substrate covered by thermally grown oxide layer
  • Thickness of the Ni layer is 400 nm;
  • The thickness of the silicon oxide layer is 500 nm;
  • The thickness of the wafer is 500 μm
  • The crystallographic orientation of silicon is 100;
• films are continuous with low  defect density.
•  Atomically thin carbon film ( 1-10 layer )
• Outstanding electronic properties
•  Chemical inertness and stability
•  Unprecedented mechanical strength

Graphene film structure: three film graphene film thickness varis from 1 - 10 layer carbon

Optical microstructure picture

Ramam Spectrum