Displaying items by tag: GaN

GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications 

• Research Grade , about 90 % useful  area

• Nominal GaN thickness:              0.5μm ± 0.1 μm
• Front Surface finish (Ga-face):      <1nm RMS,  As-grown 
• Back surface finish:                     as received
• GaN orientation:                          C-plane (00.1)
• Polarity:                                      Ga-face
• Conduction Type:                        Undoped (N-)  
• Wafer base:                                Silicon [111], N-type P-doped  R:1-5 ohm.cm;  4" diameter x 0.5mm, one side polished
• There is ~200nm AlN buffer layer between the silicon and GaN 

GaN  Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications: 

• Research Grade , about 90 % useful  area

• Nominal GaN thickness:           0.5μm ± 0.1 μm
• Front Surface finish (Ga-face):   <1nm RMS,  As-grown 
• Back surface finish:                  as received
• GaN orientation:                       C-plane (00.1)
• Polarity:                                   Ga-face
• Conduction Type:                     Undoped (N-)
• Macro Defect Density:              <5/cm^2
• Wafer base:                             Silicon [111], N type, P doped, Res: 1-10 ohm-cm, 2" diameter x 0.279mm, one side polished
• There is ~200nm AlN buffer layer between the silicon and GaN 

GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications: 

• Front Surface finish (Ga-face):    <1nm RMS,  As-grown,
• Back surface finish:                   Silicon ( 111) N-type P-doped R:1-10 ohm.cm
• GaN orientation:                        C-plane (00.1)
• Polarity:                                     Ga-face
• Conduction Type:                      Undoped (N-) and resistivities: < 0.05 Ohm-cm
• Macro Defect Density:               <1/cm^2
• There is ~200nm AlN buffer layer between the silicon and GaN 

• Mg- doped GaN  Template on sapphire is made by MOCVD -based method.

  Specifications
  

  • Research Grade , about 90 % usable  area

   

  Mg-doped P-type  GaN   Template on sapphire, Prime Grade

  GaN Thickness:              2 um +/- 10%

  Size:                             50.8 mm +/- 0.25 mm

  Resistivity:                    < 0.5 Ohm-cm

  Doping Concentration:    5E17/cc

  Dislocation Density:        (2-3)E8 cm^-2

  Front surface:               Ga-face, as grown\Back surface: as-received

  Substrate:                    c-plane sapphire, SSP single side polished

  Structure:                     350um Sapphire/1.5um GaN:nid/2um GaN:Mg>5E17/cc

• Research Grade , about 90 % usable  area
• GaN template, N+, 2” in diameter
• FLAAT (Flat Layers At All Temperatures) GaN Template  ( ALN buffer )
• FLAAT Gallium Nitride Template, N+ (Si-doped)
• 2” in diameter, Si-doped 
• Polarity: Ga-face
• Carrier Concentration: > 1E18/cm^3
• Nominal GaN Thickness: 15 um +/- 10 %
• Front side surface(after deposition and polish): Epi-ready with, 
• Ra< 0.5 nm RMS (data obtained via using a white light interferometer )
• Back side surface: Substrate as received
• Substrate: Sapphire, 2”, c-plane 0.20 deg offcut towards m-plane
• SSP, 430 um
• Backside: substrate as received 

Si- doped GaN Epitxial Template on saphhire is made by HVPE -based method.

Specifications

• Research Grade , about 90 % usable  area
• Si- doped GaN Epitxial Template on saphhire
• GaN (0001) thin film layer thickness   5 microns +/- 1 micron
• Sizes ：4" Round
• Dimensions :100mm  +/- 0.25mm
• Conduction Type: N+
• Resistivity: <0.02 Ohm-cm
•  Front surface: Ga-face, as grown
• Substrates: sapphire
• (0001) miscut: 0.3 deg +/- 0.1 deg toward M plane
• one side polished with the condition of back surface is " as received"

• Research Grade, about 90 % usable  area
• Fe-doped GaN template, N-type, 2” in diameter
• Nominal GaN Thickness: 5 um +/-  1um 
• 2” in dia, N(Fe-doped)
• Concentration:              N/A
• Resistivities:                 6-8 Ohm-cm
• Front side surface:        As grown
• Backside surface:        Substrate as received
• Polarity:                       Ga-face
• Typical Macro Defect Density:<10 cm^-2
• Sapphire Substrate, 2”. C-plane, 0.2 degrees offcut toward an a-plane direction,
• One sides polished

• Research Grade , about 90 % usable  area
• GaN template, N+, 2” in diameter
• Nominal GaN Thickness: 5 um +/-  1um 
• 2” in dia, N+(Si-doped)
• Concentration:              ~1E18/cc
• Resistivities:                 < 0.02 Ohm-cm
• Front side surface:        As grown
• Back side surface:        Substrate as received
• Polarity:                       Ga-face
• Substrate:
• Sapphire Substrate, 2”. C-plane, 1.00 degree offcut toward  a-plane direction,
• Single side polished, 430 um
• Growth method: HVPE (Hydride Vapor Phase Epitaxy)

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN.  GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications

        Research Grade

• Sizes 2” Round
• Dimensions 50mm +/- 2mm
• Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 ^o
• Conduction Type: n-type,
• Resistivity > 1E6 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90%
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness   20 microns , (+/- 10%)
• Macro Defect Density:            <=10 cm^-2
• Lattice Constant Mismatch:   14%  mismatch
• Dislocation Density:              5x10^9/ cm^2

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications

• Semi-Insulating GaN Epitaxial Template on Sapphire (C plane)
• Sizes:  3” Round
• Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 ^o
• Conduction Type: n-type,undoped
• Typical Macro Defect Density:< 5cm-2
• Resistivity:>10^6 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
•  Back Surface Finish Sapphire as-received finish
•  Useable Surface Area >90% 
•  Edge Exclusion Area 1mm
  Typical Macro defect Density: <5cm^-2
•  Package Single Wafer Container
• GaN layer thickness   5 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area